Part Number Hot Search : 
BCP51 6P22J BR1001 BD48E33 BU804 320FS FPB10 0G226
Product Description
Full Text Search
 

To Download FZT757 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
ISSUE 4 JANUARY 1996 FEATURES * Low saturation voltage * 300V VCEO COMPLEMENTARY TYPE - FZT657 PARTMARKING DETAIL - FZT757
FZT757
C
E C B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER SYMBOL MIN. V(BR)CBO V(BR)CEO -300 -300 -5 -0.1 -0.1 -0.5 -1.0 -1.0 40 50 30 20 MHz pF SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. VALUE -300 -300 -5 -1 -0.5 2 -55 to +150 UNIT V V V
A A
UNIT V V V A A W C
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-200V VEB=-3V IC=-100mA, IB=-10mA* IC=-100mA, IB=-10mA* IC=-100mA, VCE =-5V* IC=-10mA, VCE =-5V* IC=-100mA, VCE =-5V* IC=-10mA, VCE =-20V f=20MHz VCB=-20V, f=1MHz Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo
V V V
*Measured under pulsed conditions. Pulse Width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 240
FZT757
TYPICAL CHARACTERISTICS
td tr ts tf s
250
s
IB1=IB2=IC/10 VCE=10V
4
1.6
- (mV)
IC/IB=10 200
3
1.4
1.2
ts
Switching time
1.0 tf
2
0.8
150
V
0.6
td
1
0.4 tf 0.2 tr 0.1
tr
100
ts td 1
0
0.0001
0.001
0.01
0.1
1
0.01
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
Switching Speeds
100
1.2
- Normalised Gain (%)
80
1.0
IC/IB=10
VCE=5V 60
- (Volts) V
0.8
40 0.6
20 0.4
h
0
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
1
VBE(sat) v IC
Single Pulse Test at Tamb=25C
1.2
1.0 VCE=5V 0.8
0.1
DC 100ms 10ms 1ms 300s
- (Volts)
0.6
0.01
V
0.4
0.0001
0.001
0.01
0.1
1
0.001
1
10
100
1000
IC - Collector Current (Amps)
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
3 - 241


▲Up To Search▲   

 
Price & Availability of FZT757

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X